?2007 fairchild semiconductor corporation 1 www.fairchildsemi.com 1n/fdll 914/a/b / 916/a/b / 4148 / 4448 rev. b2 1n/fdll 914/a/b / 916/a/b / 4148 / 4448 small signal diode january 2007 1n/fdll 914/a/b / 9 16/a/b / 4148 / 4448 small signal diode absolute maximum ratings * t a =25 c unless otherwise noted * these ratings are limiting values above which the serviceability of the diode may be impaired. notes: 1) these ratings are based on a maximum junction temperature of 200 degrees c. 2) these are steady state limits. the factory should be consul ted on applications involving pulsed or low duty cycle operation s. thermal characteristics symbol parameter value units v rrm maximum repetitive reverse voltage 100 v i o average rectified forward current 200 ma i f dc forward current 300 ma i f recurrent peak forward current 400 ma i fsm non-repetitive peak forward surge current pulse width = 1.0 second pulse width = 1.0 microsecond 1.0 4.0 a a t stg storage temperature range -65 to + 175 c t j operating junction tempera -65 to + 175 c symbol parameter max. units 1n/fdll 914/a/b / 4148 / 4448 p d power dissipation 500 mw r ja thermal resistance, junction to ambient 300 c/w ll-34 the placement of the expansion gap has no relationship to the location of the cathode terminal ll-34 color band marking device 1st band 2nd band fdll914 black brown fdll914a black gray do-35 fdll914b brown black fdll916 black red fdll916a black white fdll916b brown brown fdll4148 black brown fdll4448 brown black -1st band denotes cathode terminal and has wider width cathode is denoted with a black band
2 www.fairchildsemi.com 1n/fdll 914/a/b / 916/a/b / 4148 / 4448 rev. b2 1n/fdll 914/a/b / 916/a/b / 4148 / 4448 small signal diode electrical characteristics* t a =25 q c unless otherwise noted * non-recurrent square wave pw = 8.3ms typical characteristics symbol parameter test conditions min. max. units v r breakdown voltage i r = 100 p a i r = 5.0 p a 100 75 v v v f forward voltage 1n914b/4448 1n916b 1n914/916/4148 1n914a/916a 1n916b 1n914b/4448 i f = 5.0ma i f = 5.0ma i f = 10ma i f = 20ma i f = 20ma i f = 100ma 620 630 720 730 1.0 1.0 1.0 1.0 mv mv v v v v i r reverse leakage v r = 20v v r = 20v, t a = 150 q c v r = 75v 25 50 5.0 na p a p a c t total capacitance 1n916a/b/4448 1n914a/b/4148 v r = 0, f = 1.0mhz v r = 0, f = 1.0mhz 2.0 4.0 pf pf t rr reverse recovery time i f = 10ma, v r = 6.0v (600ma) i rr = 1.0ma, r l = 100 : 4.0 ns figure 1. reverse voltage vs reverse current bv - 1.0 to 100 p a figure 2. reverse current vs reverse voltage ir - 10 to 100v figure 3. forward voltage vs forward current vf - 1 to 100 p a figure 4. forward voltage vs forward current vf - 0.1 to 10ma 110 120 130 140 150 160 ta=25 o c 1 2 3 5 10 20 30 50 100 reverse voltage, v r [v] reverse current, i r [ua] 0 20 40 60 80 100 120 10 20 30 50 70 100 ta= 25 o c reverse current, i r [na] reverse voltage, v r [v] general rule: the reverse current of a diode will approximately double for every ten (10) degree c increase in temperature 250 300 350 400 450 500 550 1 2 3 5 10 20 30 50 100 ta= 25 o c forward voltage, v r [mv] forward current, i f [ua] 450 500 550 600 650 700 750 0.1 0.2 0.3 0.5 1 2 3 5 10 ta= 25 o c forward voltage, v f [mv] forward current, i f [ma]
3 www.fairchildsemi.com 1n/fdll 914/a/b / 916/a/b / 4148 / 4448 rev. b2 1n/fdll 914/a/b / 916/a/b / 4148 / 4448 small signal diode typical characteristics (continued) figure 5. forward voltage vs forward current vf - 10 to 800ma figure 6. forward voltage vs ambient temperature vf - 0.01 - 20 ma (- 40 to +65 q c) figure 7. total capacitance figure 8. reverse recovery time vs reverse recovery current figure 9. average rectified current (i f(av) ) vs ambient temperature (t a ) figure 10. power derating curve 0.6 0.8 1.0 1.2 1.4 1.6 10 20 30 50 100 200 300 500 800 ta= 25 o c forward voltage, v f [mv] forward current, i f [ma] 0.01 0.1 1 10 300 400 500 600 700 800 900 3 0.3 0.03 typical ta= -40 o c ta= 25 o c ta= +65 o c forward voltage, v f [mv] forward current, i f [ma] 02468101214 0.75 0.80 0.85 0.90 t a = 25 o c total capacitance (pf) reverse voltage (v) 10 20 30 40 50 60 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ta = 25 o c reverse recovery time, t rr [ns] reverse recovery current, i rr [ma] if = 10ma , irr = 1.0 ma , rloop = 100 ohms 0 50 100 150 0 100 200 300 400 500 i f ( a v ) - a v e r a g e r e c t i f i e d c u r r e n t - m a current (ma) ambient temperature ( o c) 0 50 100 150 200 0 100 200 300 400 500 do-35 sot-23 power dissipation, p d [mw] temperature [ o c]
fairchild semiconductor trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. 1n/fdll 914/a/b / 916/a/b / 4148 / 4448 small signal diode disclaimer fairchild semiconductor reserves the righ t to make changes without further notice to any products herein to improve reliability, functio n or design. fairchild does no t assume any liability arising out of the application or use of any product or circuit described herein;neither does it convey any li cense under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, spe- cifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in th e labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reason ably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the des ign specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final s pecifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specific ations on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? p serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc ? unifet? vcx? wire? acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact ? fast ? fastr? fps? frfet? across the board. around the world.? the power franchise ? programmable active droop? rev. i22 4 www.fairchildsemi.com 1n/fdll 914/a/b / 916/a/b / 4148 / 4448 rev. b2 1n/fdll 914/a/b / 916/a/b / 4148 / 4448 small signal diode
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